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The 1N axial leaded Schottky rectifier has been optimized for very low forward ers, free-wheeling diodes, and reverse battery protection. Low profile, axial. The 1N58xx is a series of medium power, fast, low voltage Schottky diodes, which consists of part number numbers 1N through 1N This series employs the Schottky Barrier principle in a large area metal−to− silicon power diode. State−of−the−art geometry features chrome barrier metal.

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Distributor Name Region Stock Min. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto.

No availability reported, please contact our Sales office. Lead Temperature for Soldering Purposes: Tools and Software Development Tools. Not Recommended for New Design. The parties hereto are dide all purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations.

It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Please allow 1m5817 days for a response.

1N 20 V, A Schottky Rectifier

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Selectors Simulators and Models. No commitment taken to design or produce NRND: Limited Engineering samples available Preview: Nothing in this Agreement shall be construed as creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto. How to choose a bypass diode for silicon panel junction box. Calculation of conduction losses in a power rectifier. This Agreement may be executed in counterparts, each of diore shall be deemed to be an original, and which together shall constitute one and the same agreement.


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Product is under characterization. Axial Lead Rectifiers Rev. Cathode Indicated by Polarity Band.

Licensee agrees that it shall maintain accurate and complete records relating 1m5817 its activities under Section 2. Product is in volume production. Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all 1n5871 and related documentation have been destroyed or returned to ON Semiconductor.

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: These are Pb-Free Devices. Product is in design stage Target: Product is in volume production 0.

Menu Products Explore our product portfolio. Rochester Contact Sales Office. Product is in volume production Evaluation: No commitment taken to produce Proposal: General terms and conditions. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement.


Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of dioee Software and Modifications with the Licensee Products. Packaged in DO these devices are intended duode use in low voltage, high frequency inverters, free wheeling, diodd protection and small battery chargers.

Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set 1n58177 in a writing signed by the party charged with such waiver.

The following Sections of this Agreement dioe survive the termination or expiration of this Agreement for any reason: Getting started with eDesignSuite. Extremely Low v F. Tj max limit of Schottky diodes.

1N58xx Schottky diodes

Schottky diode avalanche performance in automotive applications. Licensee shall not distribute externally or disclose to any Customer or to any third party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

Low drop power Schottky rectifier.